Tuesday, June 28, 2011

NXP MIFARE Plus selected to power unified “Podorozhnik” transport card project in St. Petersburg

New card accepted for all city transport, enables future integration of additional operators

Eindhoven, Netherlands, June 28, 2011 – NXP Semiconductors N.V. (NASDAQ: NXPI) today announced that its MIFARE Plus™ contactless IC has been chosen to power the Automatic Fare Collection (AFC) system in St. Petersburg, Russia. The “Podorozhnik” - a unified electronic transport card - has been introduced in St. Petersburg to provide passengers with a convenient transport payment system. The project is a joint effort by the City Transport Committee of St. Petersburg, NXP and AFC solution providers for ground and underground transportation, including ZAO “MF-Tarif,” an NXP MIFARE Plus-based transport card manufacturer, along with SMARTRAC, a global inlay manufacturer. The unified transport card with integrated eWallet allows access to all public transportation systems in St. Petersburg. It supports future integration of additional operators such as suburban trains, road-tolling systems, parking lots and water transport. 

Wednesday, June 22, 2011

NXP Unlocks the Potential of Multifunction Car Keys

Launches market-ready NFC-enabled ‘smart’ car key

Eindhoven, Netherlands and Hamburg, Germany, June 22, 2011 - Pioneering the market for ‘smart’ car keys, NXP Semiconductors N.V. (NASDAQ: NXPI) today announced the availability of its production-ready single-chip solution for multifunction car keys - the NCF2970 (KEyLink Lite). Enhancing the functionality of car keys by supporting Near Field Communications (NFC) technology, NXP’s KEyLink Lite enables car manufacturers to offer a new driving experience with keys that connect to external NFC-compliant devices, such as mobile phones, tablets and laptops.

The launch of KEyLink Lite is timed to take advantage of the growing popularity and availability of NFC. Drivers will be able to simply wave their car key over an NFC-compliant mobile device to access essential and useful car data. Based on NFC standards, and utilizing the 13.56MHz frequency and cryptography such as Hitag-3 or AES-128, KEyLink Lite provides secure storage and enables communication of sensitive data. KEyLink Lite uniquely combines NFC capabilities and NXP’s industry-leading Remote Keyless Entry (RKE) and Passive Keyless Entry (PKE) technologies. This allows NFC-compliant mobile devices to edit and view data stored on a car key and opens many new use cases.

Thursday, June 16, 2011

Sony Ericsson selects NXP’s NFC Solution for its Android-based Smartphones

NFC enables mobile entertainment experiences

Today NXP Semiconductors N.V. (NASDAQ: NXPI) announced that its world leading near field communication (NFC) technology has been selected by Sony Ericsson for inclusion in its Android-based smartphones. Sony Ericsson, a leading, global mobile handset manufacturer focused on communications and entertainment, will use NFC to further enhance its consumers’ mobile experiences, creating a portfolio of smartphones that enable mobile transactions. Using simple touch gestures, consumers will be able to make purchases or connect to a point of sale (POS) terminal, ticketing terminal or location-based promotional tag simply and securely with their NFC-enabled smartphones.

Tuesday, June 14, 2011

NXP Small-Signal MOSFETs Set New Benchmark in RDS(on)

New portfolio enables increased power efficiency for mobile computing, communications and other consumer applications

Eindhoven, Netherlands and Hamburg, Germany, June 14, 2011 – NXP Semiconductors N.V. (NASDAQ: NXPI) today announced a new family of small-signal MOSFETs delivering breakthrough low RDS(on) performance. The low RDS(on) P-Channel and N-Channel MOSFETs enable lower power consumption for consumer electronics applications such as notebooks, tablets, handsets, e-readers, set-top-boxes and LCD TVs. These high-efficiency MOSFETs are available in high-volume SOT23 and SOT457 packages with a compact 3-mm x 3-mm footprint, allowing design engineers to replace larger package types with significantly smaller solutions offering similar or better on-resistance.

Monday, June 13, 2011

NXP Announces Grand Prize Winner of First-Ever High Performance RF Design Challenge

“A 2-kW Amplifier for Portable 449-MHz Spaced Antenna Wind Profile Radar” takes home winning prize

Eindhoven and Nijmegen, Netherlands, June 13, 2011 – In an awards ceremony held at IEEE MTT-S International Microwave Symposium for 2011 (IMS2011), NXP Semiconductors N.V. (NASDAQ: NXPI) announced the much-anticipated grand prize winner of its first-ever High Performance RF (HPRF) Design Challenge. After an intense final round of judging, “A 2-kW Amplifier for a Portable 449-MHz Spaced Antenna Wind Profiler Radar” by Brad Lindseth was selected as the overall winner. The High Performance RF Design Challenge was created to encourage the RF power community worldwide to build, test and display innovative designs in new application areas using LDMOS technology, which has become increasingly powerful, rugged and cost-effective in recent years.

Wednesday, June 8, 2011

NXP Introduces Gen8 LDMOS Technology for Bandwidth Intensive Base Stations

Designed for multi-standard and extremely efficient Doherty power amplifiers

Eindhoven, Netherlands and Baltimore, Maryland, June 8, 2011 – NXP Semiconductors N.V. (NASDAQ: NXPI) today introduced its eighth generation (Gen8) LDMOS RF power transistors for wireless base stations – allowing signal bandwidths up to 60MHz and providing optimized I/O matching structures to enable wideband, affordable, compact, multi-standard and highly efficient Doherty power amplifiers.

NXP’s Gen8 LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistors are being sampled for applications up to 960MHz with excellent linearization capabilities, extreme ruggedness and efficiencies in excess of 55 percent for multicarrier GSM power amplifiers. The second wave of products will cover GSM-WCDMA-LTE at 1800, 1900 and 2100 MHz and will sample during 2011.

NXP Introduces eXtremely Rugged XR LDMOS RF Power Transistors

New XR family offers best-in-class ruggedness and performance without added cost

Eindhoven, Netherlands and Baltimore, Maryland, June 8, 2011 - Designed for the toughest engineering environments, NXP Semiconductors N.V. (NASDAQ: NXPI) today unveiled its new XR family of “eXtremely Rugged” LDMOS RF power transistors. The XR family is designed tough-as-nails to withstand the harsh fault conditions often found in applications such as industrial lasers, metal etching and concrete drilling. Based on NXP’s industry-leading LDMOS technology, the XR family extends LDMOS into the few remaining domains that are serviced by VDMOS and bipolar transistors today. NXP will showcase its first XR RF power transistor, the BLF578XR, this week at the IEEE MTT-S International Microwave Symposium 2011 (IMS2011) in Baltimore, Maryland (booth #420).